smd type ic www.kexin.com.cn 1 smd type ic power mosfet 2 am, 30 v KMDF2C03HD features ultra low rds(on) provides higher efficiency and extends battery life logic level gate drive ? can be driven by logic ics diode is characterized for use in bridge circuits diode exhibits high speed, with soft recovery i dss specified at elevated temperature avalanche energy specified absolute maximum ratings ta = 25 parameter symbol n-channel p-channel unit drain-source voltage v dss v gate-source voltage v gss v drain current continuous i d 4.1 3 a drain current pulsed *1 i dm 21 15 a operating and storage temperature range t j ,t stg total power dissipation p d w thermal resistance ? junction to ambient r ja /w single pulse drain?to?source avalanche energy - starting t j =25 *1 pw 10 s, duty cycle 1% *2 v dd =30v,v gs = 5.0 v, peak i l = 9.0,apk, l = 8.0 mh, r g =25 *3 v dd =30v,v gs = 5.0 v, peak i l = 6.0,apk, l = 18 mh, r g =25 mj 30 20 -55to150 e as 324 *2 324 *3 2 62.5
www.kexin.com.cn 2 smd type ic smd type ic electrical characteristics ta = 25 parameter symbol min typ max unit n-ch 100 p-ch 100 n-ch 30 p-ch 30 n-ch 1 p-ch 1 n-ch 1.0 1.7 3.0 p-ch 1.0 1.5 2.0 i d =3.0a,v gs =10a 0.06 0.070 i d =1.5a,v gs =4.5v 0.17 0.200 i d =2.0a,v gs =10v 0.065 0.075 i d =1.0a,v gs =4.5v 0.225 0.300 i d =1.5a,v ds =3.0v n-ch 2.0 3.6 i d =1.0a,v ds =3v p-ch 2.0 3.4 n-channel n-ch 450 630 v ds =24v,v gs =0v,f=1mhz p-ch 397 550 n-ch 160 225 p-channel p-ch 189 250 v ds =24v,v gs =0v,f=1mhz n-ch 35 70 p-ch 64 126 i d =3.0a,v dd =15v n-ch 12 24 i d =2.0a,v dd =-15v p-ch 16 32 n-channel n-ch 65 130 v gs =4.5v,r g =9.1 p-ch 18 36 n-ch 16 32 p-channel p-ch 63 126 v gs =4.5v,,r g =6.0 n-ch 19 38 p-ch 194 390 i d =3.0a,v dd =15v n-ch 8.0 16 i d =2.0a,v dd =-15v p-ch 9.0 18 n-channel n-ch 15 30 v gs =10v,r g =9.1 p-ch 10 20 n-ch 30 60 p-channel p-ch 81 162 v gs =10v,,r g =6.0 n-ch 23 46 p-ch 192 384 n-channel n-ch 11.5 16 v ds =10v,i d =3.0a,v gs =10 v p-ch 14.2 19 n-ch 1.5 p-channel p-ch 1.1 v ds =24v,i d =2.0a,v gs =10v n-ch 3.5 p-ch 4.5 n-ch 2.8 p-ch 3.5 pf ns ns ns ns t f fall time *1 testconditons n-ch p-ch i d =250 a,v gs =0v v ds =30v,v gs =0v tr rise time *1 t d (off) turn-off delay time *1 t f fall time *1 t d (on) turn-on delay time *1 r ds (on) static drain-source on-state resistance *1 t d (off) turn-off delay time *1 c rss reverse transfer capacitance c iss input capacitance t d (on) turn-on delay time tr rise time pf pf c oss output capacitance r ds (on) static drain-source on-state resistance *1 g fs forward transconductance i dss zero gate voltage drain current v gs (th) i gss gate-source leakage v (br) dss drain-source breakdown voltage gate threshold voltage *1 v gs = 20v,v ds =0v v ds =v gs ,i d = 250 a ns ns s na v a v ns ns q 3 gate?source charge *2 gate?drain charge *2 nc q t total gate charge *2 q 1 q 2 KMDF2C03HD
www.kexin.com.cn 3 smd type ic smd type electrical characteristics ta = 25 parameter symbol min typ max unit i s =3.0 a,v gs =0v n-ch 0.82 1.2 i s =2.0 a,v gs =0 v p-ch 1.82 2 n-ch 24 p-ch 42 n-ch 17 p-ch 16 n-ch 7 p-ch 26 n-ch 0.025 p-ch 0.043 *1 pulse test: pulse width 3 300 s, duty cycle 2%. *2 switching characteristics are independent of operating junction temperature. testconditons v ns forward voltage *1 v sd t rr t a c i f =i s ,d is /d t = 100 a/ s t b reverse recovery time q rr reverse recovery storage charge KMDF2C03HD ic
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